^produeti, una. 20 stern ave. springfield, new jersey 07081 u.s.a. D43C series -30--80 volts -3 amp, 12.5 watts telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 pnp power transistors complementary to the d42c series features: ? high free-air power dissipation ? pnp complement to d42c npn ? low collector saturation voltage (0.5v typ. @ 3.0a lc) ? excellent linearity ? fast switching case style to-202 dimensions are in inches and (millimeters) |9 144-10 4'4i 3405-0425 0025 (omoi h o.om-llot . !2.413-2?e*> type 10-mj term 1 emitter term 2 collector te1m 3 base tab collector maximum ratings (ta = 25 c) (unless otherwise specified) rating collector-emitter voltage collector-emitter voltage emitter base voltage collector current ? continuous peakd) base current ? continuous total power dissipation @ ta = 25 c @ tc = 25c operating and storage junction temperature range symbol vceo vces vebo ig 'cm D43C1, 2, 3 -30 -40 -5 -3 -5 ib -2 pd tj.tstg 2.1 12.5 -55 to +150 D43C4, 5, 6 -45 -55 -5 -3 -5 -2 2.1 12.5 -55 to +150 D43C7, 8, 9 -60 -70 -5 -3 -5 -2 2.1 12.5 -55 to +150 D43C10, 11, 12 -80 -90 -5 -3 -5 -2 2.1 12.5 -55 to +150 units volts volts volts a a watts c thermal characteristics (1) pulse test pulse width = 300ms duty cycle < 2%. thermal resistance, junction to ambient thermal resistance, junction to case maximum lead temperature for soldering purposes: %" from case for 5 seconds rwa rwc tl 60 10 +260 60 10 +260 60 10 +260 60 10 +260 c/w c/w c nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
electrical characteristics (tc = 25 c) (unless otherwise specified) characteristic symbol min typ max unit | off characteristics^ collector-emitter sustaining voltage D43C1.2, 3 (ic = 100ma) D43C4, 5, 6 D43C7, 8, 9 D43C10, 11, 12 collector cutoff current (vce = rated vces) emitter cutoff current (veb = 5v) vceo(sus) ices iebo -30 -45 -60 -80 ? ? ? ? ? ? ? ? ? ? -10 -100 volts a/a ma second breakdown i second breakdown with base forward biased fbsoa see figure 3 on characteristics dc current gain ? D43C1, 4, 7, 10 (ic = -200ma, vcp = -1v) D43C2, 5, 8, 1 1 D43C3.6, 9, 12 (ic = -1a,vce = -1v) D43C1.4, 7, 10 D43C2, 5, 8, 11 (ic = -2a, vce = -1v) D43C3. 6, 9, 12 collector-emitter saturation voltage oc = -1a, ib = -50ma) D43C2. 5, 8, 11 D43C3, 6, 9, 12 oc = -1a, ib = -100ma) D43C1.4, 7. 10 base-emitter saturation voltage (lc = -1a, ib = -100ma) hfe hfe vce(sat) vce(sat) vbe(sat) 25 40 40 10 20 20 ? ? ? ? ? 120 120 ? -0.5 -05 -05 -1.3 " volts volts volts dynamic characteristics collector capacitance (vcb = -10v,f = 1mhz) current-gain ? bandwidth product (ic = -20ma, vce = -4v) ccbo fj ? ? ? 40 125 ? pf mhz switching characteristics resistive load delay time + rise time storage time fall time ig = -1a, ib1 = lea = -0-1a vnr- " 3qv t_ = 9z, ,i |
